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| AOP806 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AOP806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP806 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V ID = 3.4A (VGS = 10V) RDS(ON) < 132m (VGS = 10V) RDS(ON) < 168m (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 PDIP-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation Avalanche Current B B Symbol VDS VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD IAR EAR TJ, TSTG Maximum 10 Sec Steady State 75 25 3.4 2.7 15 2.5 1.6 10 15 -55 to 150 1.6 1 2.7 2.1 Units V V A W A mJ C Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 40 67 33 Max 50 80 40 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOP806 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=75V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=3.4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=3.4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 15 108 162 128 10 0.77 1 3 290 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54 24 2.4 5.1 VGS=10V, VDS=30V, ID=3.4A 2.3 1.0 1.2 4 VGS=10V, VDS=30V, RL=8.8, RGEN=3 IF=3.4A, dI/dt=100A/s 3.4 14.4 2.4 30.2 21.5 45 3.5 7 380 132 198 168 2.3 Min 75 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev1: May. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOP806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 6V 12 10V 4.5V 12 VDS=5V 15 9 ID (A) ID(A) 4V 9 125C 6 25C 6 3.5V 3 3 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 200 Normalized On-Resistance 170 RDS(ON) (m) 140 110 80 50 0 2 4 6 8 10 VGS=10V VGS=4.5V 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 1.6 1.4 VGS=4.5V 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=2A VGS=10V ID=3.4A ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 210 ID=3.4A 180 RDS(ON) (m) 150 120 90 25C 60 2 4 6 8 10 1.0E+02 1.0E+01 1.0E+00 IS (A) 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOP806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID=3.4A Capacitance (pF) 500 400 Ciss 300 200 Coss 100 0 0 10 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics Crss 100.0 TJ(Max)=150C TA=25C 10s Power (W) ID (Amps) 10.0 RDS(ON) limited 1.0 DC 10s 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100s 1ms 10ms 0.1s 50 40 30 20 10 1s 100 0 0.001 TJ(Max)=150C TA=25C 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=80C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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